In this study, low-energy microwave annealing is used to fabricate ultra-shallow junctions for less than 20 nm IC node applications in a potential material: Germanium (Ge). Germanium is a new promising material and might replace silicon in the future. A novel microwave annealing technique with two steps for the solid phase epitaxial recrystallization (SPER) and phosphorus dopants activation was applied to Germanium. The purpose of the first step, microwave annealing of 1.2 kW for 75 s, is to re-grow the amorphous layer and repair the destroyed crystal lattices caused by ion implantation. In the second-step of annealing, low-energy microwave, 0.9 kW (≈350°C) for 300 s, is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation concentration level will achieve 1020 cm-3. The sheet resistance will decrease to 78 ohm/sq. The low resistance after activating is reflected to the performance of the n-MOS device fabricated by the Ge substrate. The S. S. factor is 900 mV/dec, and the Ion/off ratio rise to 2.6×101. This has demonstrated that the two-step MWA has excellent control, significantly regarding leakage current.
| Published in | Journal of Electrical and Electronic Engineering (Volume 5, Issue 1) |
| DOI | 10.11648/j.jeee.20170501.12 |
| Page(s) | 7-12 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2017. Published by Science Publishing Group |
Activation, Germanium, Implant, Microwave Annealing, Solid Phase Epitaxial Recrystallization (SPER)
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APA Style
Tzu-Lang Shih, Wen-Hsi Lee. (2017). Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium. Journal of Electrical and Electronic Engineering, 5(1), 7-12. https://doi.org/10.11648/j.jeee.20170501.12
ACS Style
Tzu-Lang Shih; Wen-Hsi Lee. Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium. J. Electr. Electron. Eng. 2017, 5(1), 7-12. doi: 10.11648/j.jeee.20170501.12
AMA Style
Tzu-Lang Shih, Wen-Hsi Lee. Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium. J Electr Electron Eng. 2017;5(1):7-12. doi: 10.11648/j.jeee.20170501.12
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Download@article{10.11648/j.jeee.20170501.12,
author = {Tzu-Lang Shih and Wen-Hsi Lee},
title = {Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium},
journal = {Journal of Electrical and Electronic Engineering},
volume = {5},
number = {1},
pages = {7-12},
doi = {10.11648/j.jeee.20170501.12},
url = {https://doi.org/10.11648/j.jeee.20170501.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20170501.12},
abstract = {In this study, low-energy microwave annealing is used to fabricate ultra-shallow junctions for less than 20 nm IC node applications in a potential material: Germanium (Ge). Germanium is a new promising material and might replace silicon in the future. A novel microwave annealing technique with two steps for the solid phase epitaxial recrystallization (SPER) and phosphorus dopants activation was applied to Germanium. The purpose of the first step, microwave annealing of 1.2 kW for 75 s, is to re-grow the amorphous layer and repair the destroyed crystal lattices caused by ion implantation. In the second-step of annealing, low-energy microwave, 0.9 kW (≈350°C) for 300 s, is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation concentration level will achieve 1020 cm-3. The sheet resistance will decrease to 78 ohm/sq. The low resistance after activating is reflected to the performance of the n-MOS device fabricated by the Ge substrate. The S. S. factor is 900 mV/dec, and the Ion/off ratio rise to 2.6×101. This has demonstrated that the two-step MWA has excellent control, significantly regarding leakage current.},
year = {2017}
}
TY - JOUR T1 - Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium AU - Tzu-Lang Shih AU - Wen-Hsi Lee Y1 - 2017/03/03 PY - 2017 N1 - https://doi.org/10.11648/j.jeee.20170501.12 DO - 10.11648/j.jeee.20170501.12 T2 - Journal of Electrical and Electronic Engineering JF - Journal of Electrical and Electronic Engineering JO - Journal of Electrical and Electronic Engineering SP - 7 EP - 12 PB - Science Publishing Group SN - 2329-1605 UR - https://doi.org/10.11648/j.jeee.20170501.12 AB - In this study, low-energy microwave annealing is used to fabricate ultra-shallow junctions for less than 20 nm IC node applications in a potential material: Germanium (Ge). Germanium is a new promising material and might replace silicon in the future. A novel microwave annealing technique with two steps for the solid phase epitaxial recrystallization (SPER) and phosphorus dopants activation was applied to Germanium. The purpose of the first step, microwave annealing of 1.2 kW for 75 s, is to re-grow the amorphous layer and repair the destroyed crystal lattices caused by ion implantation. In the second-step of annealing, low-energy microwave, 0.9 kW (≈350°C) for 300 s, is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation concentration level will achieve 1020 cm-3. The sheet resistance will decrease to 78 ohm/sq. The low resistance after activating is reflected to the performance of the n-MOS device fabricated by the Ge substrate. The S. S. factor is 900 mV/dec, and the Ion/off ratio rise to 2.6×101. This has demonstrated that the two-step MWA has excellent control, significantly regarding leakage current. VL - 5 IS - 1 ER -
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