Analysis of Series-Connected IGBTs Protection Method under Short Circuit II

Mei Guifang; Xu Guancheng; Lv Miao; Lang Xuebin; Dong Xiaoshuai; Yang Xinran

doi:doi:10.11648/j.jeee.20160405.18

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Analysis of Series-Connected IGBTs Protection Method under Short Circuit II

Mei Guifang, Xu Guancheng, Lv Miao, Lang Xuebin, Dong Xiaoshuai, Yang Xinran

Published in Journal of Electrical and Electronic Engineering (Volume 4, Issue 5)

Received: 22 November 2016 Published: 24 November 2016

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Abstract

The difference between single and series-connected insulated gate bipolar transistor (IGBTs) during short circuit II (SC II) is analyzed contrastively, and requirements for an improved protection have been advanced to solve the SC II problem of series-connected IGBTs. A new principle of short circuit protection based on the logic of SC II fault processing used by the main control unit was proposed, using an active voltage clamping circuit to balance the dynamic voltage during breakdown, using an RC circuit to balance the voltage during tail current stage, and a formula to estimate the absorption capacitance and the selection principle of static voltage balancing resistance was proposed. The parameters under the actual test condition was given, the short circuit test system of series-connected IGBTs established, and the experimental verification carried out under the actual conditions. The result shows that under a Vbus of 1400V (2.65kV maximum peak voltage for each IGBT), the new protection method can provide synchronization of protect operation and voltage balancing during turning-off process, and the unbalance of steady stage voltage is under 5%.

Published in	Journal of Electrical and Electronic Engineering (Volume 4, Issue 5)
DOI	10.11648/j.jeee.20160405.18
Page(s)	139-144
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

Series-Connected IGBTs, Short Circuit in Series, SC II, Fault Detection, Voltage-Balancing in Fault

References

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[2]	ZHAOF Dong-yuan, LIU Jiang. Application Analysis of the Press-pack IGBT in the Power Electronic Field [J]. Power Electronics. 2015, 49(12): 46-48.
[3]	Dou Zechun, Rupert Stevens, Xin Lanyuan, et al. Design and characteristic analysis of novel press-contact IGBT module [J]. Electric Drive for Locomtives, 2013, 1(01): 10-13.
[4]	FENG LEI, GOU Ruifeng, ZHUO Fang. Development of 10 kV Solid State DC Breaker Based on IGBT Series-connected Technique [J]. SOUTHERN POWER SYSTEM TECHNOLOGY. 2016, 10(4): 43-49.
[5]	Nakatake H, Iwata A. Series connection of IGBTs used multilevel clamp circuit and turn off timing adjustment circuit [C]. Proceedings of IEEE 34th Annual Power Electronics Specialist Conference, 2003, 4: 1910-1915.
[6]	LUTing, Zhao Zhengming, JiShiqi, et al. Active clamping circuit with status feedback for series-connected HV-IGBTs [J]. IEEE Transactions on Industry Applications, 2014, 50(5): 3579-3590.
[7]	YU Hualong, LU Ting, JI Shiqi, YUAN Liqiang, ZHAO Zhengming. Active Clamping Circuit Threshold Voltage Design for Series-connected HVIGBTs [J]. Proceedings of the CSEE, 2016, 36(5):1357-1365.
[8]	Zhang Bingjing. Research on the unbalancing dynamic voltage of Serial Press-contact IGBT [D]. North China Electric Power University, 2014.03.
[9]	Xingyu Li. The Research of Series Connected Diode Clamping IGBT Equalizing [D]. Beijing Institute of Technology, 2016. 01.
[10]	Liu Zhouzhou, Tong Xiangqian. Analysis of short circuit protection mechanism of high power IGBT device [J]. Electric drive, 2015, 45(3): 77-80.
[11]	Yao Wenhai, Cheng Shanmei, Sun Dejin. Soft turn-off short circuit protection strategy applied to high power IGBT module [J]. Electric drive, 2015, 45(3): 77-80.
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[15]	WEI Feng, LI Li. Short-circuit Features of High Voltage IGBT in di/dt Buffer Circuit [J]. The World of Power Supply, 2013, 06: 32-35.

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APA Style

Mei Guifang, Xu Guancheng, Lv Miao, Lang Xuebin, Dong Xiaoshuai, et al. (2016). Analysis of Series-Connected IGBTs Protection Method under Short Circuit II. Journal of Electrical and Electronic Engineering, 4(5), 139-144. https://doi.org/10.11648/j.jeee.20160405.18

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ACS Style

Mei Guifang; Xu Guancheng; Lv Miao; Lang Xuebin; Dong Xiaoshuai, et al. Analysis of Series-Connected IGBTs Protection Method under Short Circuit II. J. Electr. Electron. Eng. 2016, 4(5), 139-144. doi: 10.11648/j.jeee.20160405.18

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AMA Style

Mei Guifang, Xu Guancheng, Lv Miao, Lang Xuebin, Dong Xiaoshuai, et al. Analysis of Series-Connected IGBTs Protection Method under Short Circuit II. J Electr Electron Eng. 2016;4(5):139-144. doi: 10.11648/j.jeee.20160405.18

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@article{10.11648/j.jeee.20160405.18,
  author = {Mei Guifang and Xu Guancheng and Lv Miao and Lang Xuebin and Dong Xiaoshuai and Yang Xinran},
  title = {Analysis of Series-Connected IGBTs Protection Method under Short Circuit II},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {4},
  number = {5},
  pages = {139-144},
  doi = {10.11648/j.jeee.20160405.18},
  url = {https://doi.org/10.11648/j.jeee.20160405.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20160405.18},
  abstract = {The difference between single and series-connected insulated gate bipolar transistor (IGBTs) during short circuit II (SC II) is analyzed contrastively, and requirements for an improved protection have been advanced to solve the SC II problem of series-connected IGBTs. A new principle of short circuit protection based on the logic of SC II fault processing used by the main control unit was proposed, using an active voltage clamping circuit to balance the dynamic voltage during breakdown, using an RC circuit to balance the voltage during tail current stage, and a formula to estimate the absorption capacitance and the selection principle of static voltage balancing resistance was proposed. The parameters under the actual test condition was given, the short circuit test system of series-connected IGBTs established, and the experimental verification carried out under the actual conditions. The result shows that under a Vbus of 1400V (2.65kV maximum peak voltage for each IGBT), the new protection method can provide synchronization of protect operation and voltage balancing during turning-off process, and the unbalance of steady stage voltage is under 5%.},
 year = {2016}
}

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TY  - JOUR
T1  - Analysis of Series-Connected IGBTs Protection Method under Short Circuit II
AU  - Mei Guifang
AU  - Xu Guancheng
AU  - Lv Miao
AU  - Lang Xuebin
AU  - Dong Xiaoshuai
AU  - Yang Xinran
Y1  - 2016/11/24
PY  - 2016
N1  - https://doi.org/10.11648/j.jeee.20160405.18
DO  - 10.11648/j.jeee.20160405.18
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 139
EP  - 144
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20160405.18
AB  - The difference between single and series-connected insulated gate bipolar transistor (IGBTs) during short circuit II (SC II) is analyzed contrastively, and requirements for an improved protection have been advanced to solve the SC II problem of series-connected IGBTs. A new principle of short circuit protection based on the logic of SC II fault processing used by the main control unit was proposed, using an active voltage clamping circuit to balance the dynamic voltage during breakdown, using an RC circuit to balance the voltage during tail current stage, and a formula to estimate the absorption capacitance and the selection principle of static voltage balancing resistance was proposed. The parameters under the actual test condition was given, the short circuit test system of series-connected IGBTs established, and the experimental verification carried out under the actual conditions. The result shows that under a Vbus of 1400V (2.65kV maximum peak voltage for each IGBT), the new protection method can provide synchronization of protect operation and voltage balancing during turning-off process, and the unbalance of steady stage voltage is under 5%.
VL  - 4
IS  - 5
ER  -

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Author Information

Mei Guifang

Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Xu Guancheng

Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Lv Miao

Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Lang Xuebin

Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Dong Xiaoshuai

Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China
Yang Xinran

Xi’an Xuji Power Electronic Technology Co., Ltd., Xi’an, China

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Plain Text BibTeX RIS

APA Style

Mei Guifang, Xu Guancheng, Lv Miao, Lang Xuebin, Dong Xiaoshuai, et al. (2016). Analysis of Series-Connected IGBTs Protection Method under Short Circuit II. Journal of Electrical and Electronic Engineering, 4(5), 139-144. https://doi.org/10.11648/j.jeee.20160405.18

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ACS Style

Mei Guifang; Xu Guancheng; Lv Miao; Lang Xuebin; Dong Xiaoshuai, et al. Analysis of Series-Connected IGBTs Protection Method under Short Circuit II. J. Electr. Electron. Eng. 2016, 4(5), 139-144. doi: 10.11648/j.jeee.20160405.18

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AMA Style

Mei Guifang, Xu Guancheng, Lv Miao, Lang Xuebin, Dong Xiaoshuai, et al. Analysis of Series-Connected IGBTs Protection Method under Short Circuit II. J Electr Electron Eng. 2016;4(5):139-144. doi: 10.11648/j.jeee.20160405.18

Copy | Download

@article{10.11648/j.jeee.20160405.18,
  author = {Mei Guifang and Xu Guancheng and Lv Miao and Lang Xuebin and Dong Xiaoshuai and Yang Xinran},
  title = {Analysis of Series-Connected IGBTs Protection Method under Short Circuit II},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {4},
  number = {5},
  pages = {139-144},
  doi = {10.11648/j.jeee.20160405.18},
  url = {https://doi.org/10.11648/j.jeee.20160405.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20160405.18},
  abstract = {The difference between single and series-connected insulated gate bipolar transistor (IGBTs) during short circuit II (SC II) is analyzed contrastively, and requirements for an improved protection have been advanced to solve the SC II problem of series-connected IGBTs. A new principle of short circuit protection based on the logic of SC II fault processing used by the main control unit was proposed, using an active voltage clamping circuit to balance the dynamic voltage during breakdown, using an RC circuit to balance the voltage during tail current stage, and a formula to estimate the absorption capacitance and the selection principle of static voltage balancing resistance was proposed. The parameters under the actual test condition was given, the short circuit test system of series-connected IGBTs established, and the experimental verification carried out under the actual conditions. The result shows that under a Vbus of 1400V (2.65kV maximum peak voltage for each IGBT), the new protection method can provide synchronization of protect operation and voltage balancing during turning-off process, and the unbalance of steady stage voltage is under 5%.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - Analysis of Series-Connected IGBTs Protection Method under Short Circuit II
AU  - Mei Guifang
AU  - Xu Guancheng
AU  - Lv Miao
AU  - Lang Xuebin
AU  - Dong Xiaoshuai
AU  - Yang Xinran
Y1  - 2016/11/24
PY  - 2016
N1  - https://doi.org/10.11648/j.jeee.20160405.18
DO  - 10.11648/j.jeee.20160405.18
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 139
EP  - 144
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20160405.18
AB  - The difference between single and series-connected insulated gate bipolar transistor (IGBTs) during short circuit II (SC II) is analyzed contrastively, and requirements for an improved protection have been advanced to solve the SC II problem of series-connected IGBTs. A new principle of short circuit protection based on the logic of SC II fault processing used by the main control unit was proposed, using an active voltage clamping circuit to balance the dynamic voltage during breakdown, using an RC circuit to balance the voltage during tail current stage, and a formula to estimate the absorption capacitance and the selection principle of static voltage balancing resistance was proposed. The parameters under the actual test condition was given, the short circuit test system of series-connected IGBTs established, and the experimental verification carried out under the actual conditions. The result shows that under a Vbus of 1400V (2.65kV maximum peak voltage for each IGBT), the new protection method can provide synchronization of protect operation and voltage balancing during turning-off process, and the unbalance of steady stage voltage is under 5%.
VL  - 4
IS  - 5
ER  -

Copy | Download