| Peer-Reviewed

Optical and Structural Properties of CdS/ZnSe Bi-Layer Thin Films Prepared by E-Beam Technique

Received: 6 June 2014     Accepted: 17 June 2014     Published: 30 June 2014
Views:       Downloads:
Abstract

Single and bi-layer thin films of Cadmium Sulphide (CdS) and Zinc Selenide (ZnSe) were prepared on glass and ITO/Glass substrates by e-beam technique. Spectral transmittance of bi-layer thin film showed red shift with prolonged interference effect. The decrease in Urbach tail of bi-layer thin film signifies the decreased band gap with increased grain size. Single layer CdS film has prominent (002) hexagonal peak where as bi-layer thin film confirm with (002) hexagonal and (111) cubic peaks of CdS and ZnSe respectively. CdS grain size was found to be 14.5, 17.1, and 33.1 nm on glass, ITO/Glass and ZnSe/ITO/Glass substrates respectively.

Published in International Journal of Materials Science and Applications (Volume 3, Issue 3)
DOI 10.11648/j.ijmsa.20140303.18
Page(s) 116-120
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Bi-Layer, Cadmium Sulphide, E-Beam Technique, Thin Films, Zinc Selenide

References
[1] I. Broser, Ch. Fricke, B. Lummer, R. Heitz, H. Perls and A. Hoffmann, “Optical nonlinearity and fast switching due to birefringence and mode coupling in CdS crystals,” J. Cryst. Growth 117 (1-4), 788, 1992.
[2] T. Tadokoro, S. Ohta, T. Ishiguro, Y. Ichinose, S. Kobayashi and N. Yamamoto, “Growth and characterization of CdS epilayers on (100) GaAs by atomic layer epitaxy,” J. Cryst. Growth 130 (1-2), p. 29, 1993.
[3] B. E. Mc Candless and S. S. Hegedus, “Influence of CdS Window Layer on Thin Film CdS/CdTe Solar Cell Performance,” in Proceedings of 22nd IEEE Pho-tovoltaic Specialists Conference, p. 967, 1991.
[4] M. A. Matin, N. Amin, A. Zaharim and K. Sopian, “A study towards the possibility of ultra-thin CdS/CdTe high efficiency solar cells from numerical analysis,” Wseas Tran. Env. and Dev. 6(8), p. 571, 2010.
[5] G. C. Morris and S. K. Das, “Influence of CdCI Treatment of CdS/CdSTe Thin film solar cells,” in Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, p. 469, 1993.
[6] R. B. Von and G. H. Bauer, “Ma-terial requirements for buffer layers used to obtain solar cells with high open circuit voltages,” National Renewable Energy Laboratory, CP-520-26363, San Francisco, CA, 1999.
[7] D. Ha-riskos, S. Spiering and M. Powalla, “Buffer layers in Cu(InGa)Se2 solar cells and modules,” Thin Solid Films 99, p. 480, 2005.
[8] S. Venkatachalam, D. Mangalaraj, Sa. K. Narayandass, K. Kim and J. Yi, “Composition, structural, dielectric and DC characterization of vacuum deposited ZnSe thin films,” Vacuum 81, p. 928, 2007.
[9] S. Venkatachalam, S. Agilan, D. Mangalaraj and Sa. K. Narayandass, “Optoelectronic properties of ZnSe thin films,” Mater. Sci. Semicond. Process 10, p. 128, 2007.
[10] R. Kuzel, V. Valvoda, M. Chladek, J. Musil and J. Matous, “XRD Micro structural study of Zn films deposited by unbalanced magnetron sputtering,” Thin Solid Films, 263(2), p. 150, 1995.
[11] K. L. Chopra, R. C. Kainthla, D. K. Pandya and A. P. Thakoor, In: G. Hass et al., Physics of thin films, Vol. 12, p. 167, [Academic Press Inc., New York, 1982].
[12] R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phy. E: Sci. Instrum 16, p. 1244, 1983.
[13] P. Chrysicopoulou, D. Davazoglou, Chr. Trapalis and G. Kordas, “Optical properties of very thin (<100 nm) sol–gel TiO2 films,” Thin Solid Films 323, p. 188, 1998.
[14] J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, G. H. Kim and S. Y. Lee, Thin Solid Films 515, p. 3580, 2007.
[15] G. Grebe, G Roussos and H. J. Schulz, “Cr2+ excitation levels in ZnSe and ZnS,” J. Phys. C: Solid State Physics 9, p. 4511, 1976.
[16] M. M. D. Kumar and S. Devadason, “A Comparative Study on the Optical Properties of Multilayer CdSe/CdTe Thin Film with Single Layer CdTe and CdSe Films,” J. Nano - Electron. Phys 5(3), p. 03007, 2013.
[17] C. A. Estrada, R. A. Zingaro, E. A. Meyers, P. K. Nair and M. T. S. Nair, “Modification of chemically deposited ZnSe thin films by ion exchange reaction with copper ions in solution,” Thin Solid Films 247(2), p. 208, 1994.
[18] F. Urbach, “The long wavelength edge of photographic sensitivity and of the electronic absorption of solids,” Phys Rev 92, p. 1324, 1953.
[19] J. Torres, J.I. Cisneros, and G. Gordillo, “Determination of the Optical Constants of Policrystalline CdS Thin Films Prepared by Evaporation,” Adv. Mat. Sci. & Tech 1(2), p. 7, 1996.
[20] M. G. Krishna, K. N. Rao, and S. Mohan, “A comparative study of the optical properties of zirconia thin films prepared by ion-assisted deposition,” Thin Solid Films 207, p. 248, 1992.
[21] F. W. Mont, J. K. Kim, M. F. Schubert, E F. Schubert and R. W. Siegel, “High-refractive-index TiO2 -nanoparticle-loaded encapsulants for light-emitting diodes,” J. Appl. Phys 103, p. 083120, 2008.
[22] H. P. Klug and L. E. Alexander, “X-Ray Diffraction Procedures: For Polycrystalline and Amorphous Materials (2nd Ed.),” [Wiley, New York. 1974].
[23] Z. Bai, L. Wan, Z Hou and D Wang, “Effect of CdCl2 annealing treatment on CdS thin films and CdTe/CdS thin film solar cells,” Phys. Status Solidi C 8, p. 628, 2011.
[24] V. Komin, B. Tetali, V. Viswanathan, S. Yu, D. L. Morel and C. S. Ferekides, “The effect of the CdCl2 treatment on CdTe/CdS thin film solar cells studied using deep level transient spectroscopy,” Thin Solid Films 431–432(1), p. 143, 2003.
Cite This Article
  • APA Style

    Raghu Patel, Naveen Chickmagalur Shivappa, Shailaja Jeetendra, Ganesh Sanjeev, Murugaiya Sridhar Ilango, et al. (2014). Optical and Structural Properties of CdS/ZnSe Bi-Layer Thin Films Prepared by E-Beam Technique. International Journal of Materials Science and Applications, 3(3), 116-120. https://doi.org/10.11648/j.ijmsa.20140303.18

    Copy | Download

    ACS Style

    Raghu Patel; Naveen Chickmagalur Shivappa; Shailaja Jeetendra; Ganesh Sanjeev; Murugaiya Sridhar Ilango, et al. Optical and Structural Properties of CdS/ZnSe Bi-Layer Thin Films Prepared by E-Beam Technique. Int. J. Mater. Sci. Appl. 2014, 3(3), 116-120. doi: 10.11648/j.ijmsa.20140303.18

    Copy | Download

    AMA Style

    Raghu Patel, Naveen Chickmagalur Shivappa, Shailaja Jeetendra, Ganesh Sanjeev, Murugaiya Sridhar Ilango, et al. Optical and Structural Properties of CdS/ZnSe Bi-Layer Thin Films Prepared by E-Beam Technique. Int J Mater Sci Appl. 2014;3(3):116-120. doi: 10.11648/j.ijmsa.20140303.18

    Copy | Download

  • @article{10.11648/j.ijmsa.20140303.18,
      author = {Raghu Patel and Naveen Chickmagalur Shivappa and Shailaja Jeetendra and Ganesh Sanjeev and Murugaiya Sridhar Ilango and Mahesh Hampapatna Matt},
      title = {Optical and Structural Properties of CdS/ZnSe Bi-Layer Thin Films Prepared by E-Beam Technique},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {3},
      pages = {116-120},
      doi = {10.11648/j.ijmsa.20140303.18},
      url = {https://doi.org/10.11648/j.ijmsa.20140303.18},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.18},
      abstract = {Single and bi-layer thin films of Cadmium Sulphide (CdS) and Zinc Selenide (ZnSe) were prepared on glass and ITO/Glass substrates by e-beam technique. Spectral transmittance of bi-layer thin film showed red shift with prolonged interference effect. The decrease in Urbach tail of bi-layer thin film signifies the decreased band gap with increased grain size. Single layer CdS film has prominent (002) hexagonal peak where as bi-layer thin film confirm with (002) hexagonal and (111) cubic peaks of CdS and ZnSe respectively. CdS grain size was found to be 14.5, 17.1, and 33.1 nm on glass, ITO/Glass and ZnSe/ITO/Glass substrates respectively.},
     year = {2014}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - Optical and Structural Properties of CdS/ZnSe Bi-Layer Thin Films Prepared by E-Beam Technique
    AU  - Raghu Patel
    AU  - Naveen Chickmagalur Shivappa
    AU  - Shailaja Jeetendra
    AU  - Ganesh Sanjeev
    AU  - Murugaiya Sridhar Ilango
    AU  - Mahesh Hampapatna Matt
    Y1  - 2014/06/30
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ijmsa.20140303.18
    DO  - 10.11648/j.ijmsa.20140303.18
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 116
    EP  - 120
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20140303.18
    AB  - Single and bi-layer thin films of Cadmium Sulphide (CdS) and Zinc Selenide (ZnSe) were prepared on glass and ITO/Glass substrates by e-beam technique. Spectral transmittance of bi-layer thin film showed red shift with prolonged interference effect. The decrease in Urbach tail of bi-layer thin film signifies the decreased band gap with increased grain size. Single layer CdS film has prominent (002) hexagonal peak where as bi-layer thin film confirm with (002) hexagonal and (111) cubic peaks of CdS and ZnSe respectively. CdS grain size was found to be 14.5, 17.1, and 33.1 nm on glass, ITO/Glass and ZnSe/ITO/Glass substrates respectively.
    VL  - 3
    IS  - 3
    ER  - 

    Copy | Download

Author Information
  • Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore – 560056, Karnataka, India

  • Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore – 560056, Karnataka, India

  • Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore – 560056, Karnataka, India

  • Microtron Centre, Mangalagangothri, Mangalore University, Mangalore – 574199, Karnataka, India

  • Department of Physics, Jain University, Jayanagar 3rd Block, Bangalore – 560011, Karnataka, India

  • Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore – 560056, Karnataka, India

  • Sections