Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3

Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov

doi:doi:10.11648/j.ijmsa.20140303.17

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Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov

Published in International Journal of Materials Science and Applications (Volume 3, Issue 3)

Received: 18 May 2014 Accepted: 7 June 2014 Published: 20 June 2014

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Abstract

Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.

Published in	International Journal of Materials Science and Applications (Volume 3, Issue 3)
DOI	10.11648/j.ijmsa.20140303.17
Page(s)	111-115
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Structure, Oxide Layers, Component, Monocrystal, Surface, Electric Field

References

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[4]	Boykov Yu., Qribanov О., Danilov V. // Inorganic materials (1990). v. 26. no. 8. pp. 1628.
[5]	Fillips C. Mutual diffusion and reaction. M., Mir, (1982), p. 576
[6]	Skakov Yu., Edneral N., Mazzora X., Kropasin V. N Scientific papers. Moscow, Metallurgy, (1983) p. 8 (in Russian)
[7]	Andries М., Ponomar V., Smirnov, Смирнов V, Mironos A. Quantum Electronics, (1986), v.13, no 6, pp.1093-1117
[8]	Kalinin S. Ivanichkiy V., Chiminech V., Dov-qoshey N. Surface. Physics, chemistry, mechanics, (1984), no 12, p.100-1035.
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[10]	Fisher I. Statistical theory of liquids. M. IFML, (1961) 284p.
[11]	Tatarinova L. The structure of amorphous solid and liquid substances. Moscow: Nauka, 1983, 151p.
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Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. (2014). Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. International Journal of Materials Science and Applications, 3(3), 111-115. https://doi.org/10.11648/j.ijmsa.20140303.17

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ACS Style

Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. Int. J. Mater. Sci. Appl. 2014, 3(3), 111-115. doi: 10.11648/j.ijmsa.20140303.17

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AMA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. Int J Mater Sci Appl. 2014;3(3):111-115. doi: 10.11648/j.ijmsa.20140303.17

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@article{10.11648/j.ijmsa.20140303.17,
  author = {Musaver Musayev and Sedreddin Axmedov and Gurban Axmedov},
  title = {Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {3},
  pages = {111-115},
  doi = {10.11648/j.ijmsa.20140303.17},
  url = {https://doi.org/10.11648/j.ijmsa.20140303.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.17},
  abstract = {Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.},
 year = {2014}
}

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TY  - JOUR
T1  - Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3
AU  - Musaver Musayev
AU  - Sedreddin Axmedov
AU  - Gurban Axmedov
Y1  - 2014/06/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140303.17
DO  - 10.11648/j.ijmsa.20140303.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 111
EP  - 115
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140303.17
AB  - Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.
VL  - 3
IS  - 3
ER  -

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Author Information

Musaver Musayev

Department of Physics, Azerbaijan State Oil Academy, Baku, Azerbaijan
Sedreddin Axmedov

Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan
Gurban Axmedov

Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan

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APA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. (2014). Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. International Journal of Materials Science and Applications, 3(3), 111-115. https://doi.org/10.11648/j.ijmsa.20140303.17

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ACS Style

Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. Int. J. Mater. Sci. Appl. 2014, 3(3), 111-115. doi: 10.11648/j.ijmsa.20140303.17

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AMA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3. Int J Mater Sci Appl. 2014;3(3):111-115. doi: 10.11648/j.ijmsa.20140303.17

Copy | Download

@article{10.11648/j.ijmsa.20140303.17,
  author = {Musaver Musayev and Sedreddin Axmedov and Gurban Axmedov},
  title = {Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {3},
  pages = {111-115},
  doi = {10.11648/j.ijmsa.20140303.17},
  url = {https://doi.org/10.11648/j.ijmsa.20140303.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.17},
  abstract = {Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3
AU  - Musaver Musayev
AU  - Sedreddin Axmedov
AU  - Gurban Axmedov
Y1  - 2014/06/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140303.17
DO  - 10.11648/j.ijmsa.20140303.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 111
EP  - 115
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140303.17
AB  - Processes of oxidation in the films Bi2Te3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi2Te3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х1018 up to 6х1019 cm-3. The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi2O3. The method of diffraction electron with high energy – electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi - S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi2S3 from conditions of reception of thin layers - besieged as under influence on molecular pair an external electric field intensity 3000Vxcm-1, and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.
VL  - 3
IS  - 3
ER  -

Copy | Download