New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Tae-Hyeon Lim; Hyuk-Ryeol Park

doi:doi:10.11648/j.ijmsa.20140303.15

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New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Tae-Hyeon Lim, Hyuk-Ryeol Park

Published in International Journal of Materials Science and Applications (Volume 3, Issue 3)

Received: 1 May 2014 Accepted: 17 May 2014 Published: 30 May 2014

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Abstract

In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).

Published in	International Journal of Materials Science and Applications (Volume 3, Issue 3)
DOI	10.11648/j.ijmsa.20140303.15
Page(s)	100-105
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Microcrystalline Silicon, Atmospheric Adsorption Instability, Stretched-Exponential Decay, Band-Bending

References

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APA Style

Tae-Hyeon Lim, Hyuk-Ryeol Park. (2014). New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. International Journal of Materials Science and Applications, 3(3), 100-105. https://doi.org/10.11648/j.ijmsa.20140303.15

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ACS Style

Tae-Hyeon Lim; Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int. J. Mater. Sci. Appl. 2014, 3(3), 100-105. doi: 10.11648/j.ijmsa.20140303.15

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AMA Style

Tae-Hyeon Lim, Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int J Mater Sci Appl. 2014;3(3):100-105. doi: 10.11648/j.ijmsa.20140303.15

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@article{10.11648/j.ijmsa.20140303.15,
  author = {Tae-Hyeon Lim and Hyuk-Ryeol Park},
  title = {New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {3},
  pages = {100-105},
  doi = {10.11648/j.ijmsa.20140303.15},
  url = {https://doi.org/10.11648/j.ijmsa.20140303.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.15},
  abstract = {In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).},
 year = {2014}
}

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TY  - JOUR
T1  - New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films
AU  - Tae-Hyeon Lim
AU  - Hyuk-Ryeol Park
Y1  - 2014/05/30
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140303.15
DO  - 10.11648/j.ijmsa.20140303.15
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 100
EP  - 105
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140303.15
AB  - In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).
VL  - 3
IS  - 3
ER  -

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Author Information

Tae-Hyeon Lim

Department of Physics, Mokpo National University, Muan, Jeonnam, Republic of Korea, 534-729
Hyuk-Ryeol Park

Department of Physics, Mokpo National University, Muan, Jeonnam, Republic of Korea, 534-729

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APA Style

Tae-Hyeon Lim, Hyuk-Ryeol Park. (2014). New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. International Journal of Materials Science and Applications, 3(3), 100-105. https://doi.org/10.11648/j.ijmsa.20140303.15

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ACS Style

Tae-Hyeon Lim; Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int. J. Mater. Sci. Appl. 2014, 3(3), 100-105. doi: 10.11648/j.ijmsa.20140303.15

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AMA Style

Tae-Hyeon Lim, Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int J Mater Sci Appl. 2014;3(3):100-105. doi: 10.11648/j.ijmsa.20140303.15

Copy | Download

@article{10.11648/j.ijmsa.20140303.15,
  author = {Tae-Hyeon Lim and Hyuk-Ryeol Park},
  title = {New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {3},
  pages = {100-105},
  doi = {10.11648/j.ijmsa.20140303.15},
  url = {https://doi.org/10.11648/j.ijmsa.20140303.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.15},
  abstract = {In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films
AU  - Tae-Hyeon Lim
AU  - Hyuk-Ryeol Park
Y1  - 2014/05/30
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140303.15
DO  - 10.11648/j.ijmsa.20140303.15
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 100
EP  - 105
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140303.15
AB  - In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).
VL  - 3
IS  - 3
ER  -

Copy | Download