Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films

Dixit Prasher; Kavita Dhakad; Ashok k. Sharma; Vikas Thakur; Poolla Rajaram

doi:doi:10.11648/j.ijmsa.20140301.11

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Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films

Dixit Prasher, Kavita Dhakad, Ashok k. Sharma, Vikas Thakur, Poolla Rajaram

Published in International Journal of Materials Science and Applications (Volume 3, Issue 1)

Received: 8 November 2013 Published: 30 December 2013

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Abstract

CuInTe2 thin films were electrochemically deposited on fluorine-doped tin oxide (<10 Ω/□) coated glass. The electrochemical bath used for the electrodeposition of CuInTe2 thin films consisted of aqueous solution mixture of 0.025 M CuCl2, 0.1 M InCl3 and pre-reacted 0.01M tellurium with HNO3.Linear and cyclic sweep voltammograms were analysed to find out the suitable deposition potentials and growth parameters. Acetronitrile was added as a supporting electrolyte and growth was carried out at the constant deposition potentials of -350 mV and - 450 mV with and without stirring. X-ray diffraction (XRD) results obtained in this work show films that were grown under stirring conditions are more oriented in the (112) direction. CuInTe2 were also analyzed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). SEM study revealed the formation of uniformly covered nanoflakes of 40-50 nanometers in width and compositional analysis show that CuInTe2 film grown had an excess of indium content, but (Cu %+In%):Te% is close to stoichiometry.

Published in	International Journal of Materials Science and Applications (Volume 3, Issue 1)
DOI	10.11648/j.ijmsa.20140301.11
Page(s)	1-5
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

CuInTe2, Electrodeposition, XRD, SEM, Thin Films, Solar Energy Materials

References

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APA Style

Dixit Prasher, Kavita Dhakad, Ashok k. Sharma, Vikas Thakur, Poolla Rajaram. (2013). Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films. International Journal of Materials Science and Applications, 3(1), 1-5. https://doi.org/10.11648/j.ijmsa.20140301.11

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ACS Style

Dixit Prasher; Kavita Dhakad; Ashok k. Sharma; Vikas Thakur; Poolla Rajaram. Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films. Int. J. Mater. Sci. Appl. 2013, 3(1), 1-5. doi: 10.11648/j.ijmsa.20140301.11

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AMA Style

Dixit Prasher, Kavita Dhakad, Ashok k. Sharma, Vikas Thakur, Poolla Rajaram. Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films. Int J Mater Sci Appl. 2013;3(1):1-5. doi: 10.11648/j.ijmsa.20140301.11

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@article{10.11648/j.ijmsa.20140301.11,
  author = {Dixit Prasher and Kavita Dhakad and Ashok k. Sharma and Vikas Thakur and Poolla Rajaram},
  title = {Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {1},
  pages = {1-5},
  doi = {10.11648/j.ijmsa.20140301.11},
  url = {https://doi.org/10.11648/j.ijmsa.20140301.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140301.11},
  abstract = {CuInTe2 thin films were electrochemically deposited on fluorine-doped tin oxide (<10 Ω/□) coated glass. The electrochemical bath used for the electrodeposition of CuInTe2 thin films consisted of aqueous solution mixture of 0.025 M CuCl2, 0.1 M InCl3 and pre-reacted 0.01M tellurium with HNO3.Linear and cyclic sweep voltammograms were analysed to find out the suitable deposition potentials and growth parameters. Acetronitrile was added as a supporting electrolyte and growth was carried out at the constant deposition potentials of -350 mV and - 450 mV with and without stirring. X-ray diffraction (XRD) results obtained in this work show films that were grown under stirring conditions are more oriented in the (112) direction. CuInTe2 were also analyzed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). SEM study revealed the formation of uniformly covered nanoflakes of 40-50 nanometers in width and compositional analysis show that CuInTe2 film grown had an excess of indium content, but (Cu %+In%):Te% is close to stoichiometry.},
 year = {2013}
}

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TY  - JOUR
T1  - Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films
AU  - Dixit Prasher
AU  - Kavita Dhakad
AU  - Ashok k. Sharma
AU  - Vikas Thakur
AU  - Poolla Rajaram
Y1  - 2013/12/30
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20140301.11
DO  - 10.11648/j.ijmsa.20140301.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 1
EP  - 5
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140301.11
AB  - CuInTe2 thin films were electrochemically deposited on fluorine-doped tin oxide (<10 Ω/□) coated glass. The electrochemical bath used for the electrodeposition of CuInTe2 thin films consisted of aqueous solution mixture of 0.025 M CuCl2, 0.1 M InCl3 and pre-reacted 0.01M tellurium with HNO3.Linear and cyclic sweep voltammograms were analysed to find out the suitable deposition potentials and growth parameters. Acetronitrile was added as a supporting electrolyte and growth was carried out at the constant deposition potentials of -350 mV and - 450 mV with and without stirring. X-ray diffraction (XRD) results obtained in this work show films that were grown under stirring conditions are more oriented in the (112) direction. CuInTe2 were also analyzed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). SEM study revealed the formation of uniformly covered nanoflakes of 40-50 nanometers in width and compositional analysis show that CuInTe2 film grown had an excess of indium content, but (Cu %+In%):Te% is close to stoichiometry.
VL  - 3
IS  - 1
ER  -

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Author Information

Dixit Prasher

School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Kavita Dhakad

School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Ashok k. Sharma

School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Vikas Thakur

School of Studies in Physics, Jiwaji University, Gwalior 474011- India
Poolla Rajaram

School of Studies in Physics, Jiwaji University, Gwalior 474011- India

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Plain Text BibTeX RIS

APA Style

Dixit Prasher, Kavita Dhakad, Ashok k. Sharma, Vikas Thakur, Poolla Rajaram. (2013). Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films. International Journal of Materials Science and Applications, 3(1), 1-5. https://doi.org/10.11648/j.ijmsa.20140301.11

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ACS Style

Dixit Prasher; Kavita Dhakad; Ashok k. Sharma; Vikas Thakur; Poolla Rajaram. Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films. Int. J. Mater. Sci. Appl. 2013, 3(1), 1-5. doi: 10.11648/j.ijmsa.20140301.11

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AMA Style

Dixit Prasher, Kavita Dhakad, Ashok k. Sharma, Vikas Thakur, Poolla Rajaram. Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films. Int J Mater Sci Appl. 2013;3(1):1-5. doi: 10.11648/j.ijmsa.20140301.11

Copy | Download

@article{10.11648/j.ijmsa.20140301.11,
  author = {Dixit Prasher and Kavita Dhakad and Ashok k. Sharma and Vikas Thakur and Poolla Rajaram},
  title = {Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {1},
  pages = {1-5},
  doi = {10.11648/j.ijmsa.20140301.11},
  url = {https://doi.org/10.11648/j.ijmsa.20140301.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140301.11},
  abstract = {CuInTe2 thin films were electrochemically deposited on fluorine-doped tin oxide (<10 Ω/□) coated glass. The electrochemical bath used for the electrodeposition of CuInTe2 thin films consisted of aqueous solution mixture of 0.025 M CuCl2, 0.1 M InCl3 and pre-reacted 0.01M tellurium with HNO3.Linear and cyclic sweep voltammograms were analysed to find out the suitable deposition potentials and growth parameters. Acetronitrile was added as a supporting electrolyte and growth was carried out at the constant deposition potentials of -350 mV and - 450 mV with and without stirring. X-ray diffraction (XRD) results obtained in this work show films that were grown under stirring conditions are more oriented in the (112) direction. CuInTe2 were also analyzed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). SEM study revealed the formation of uniformly covered nanoflakes of 40-50 nanometers in width and compositional analysis show that CuInTe2 film grown had an excess of indium content, but (Cu %+In%):Te% is close to stoichiometry.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Electrochemical Growth and Studies of Indium-Rich CuInTe2 Thin Films
AU  - Dixit Prasher
AU  - Kavita Dhakad
AU  - Ashok k. Sharma
AU  - Vikas Thakur
AU  - Poolla Rajaram
Y1  - 2013/12/30
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20140301.11
DO  - 10.11648/j.ijmsa.20140301.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 1
EP  - 5
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140301.11
AB  - CuInTe2 thin films were electrochemically deposited on fluorine-doped tin oxide (<10 Ω/□) coated glass. The electrochemical bath used for the electrodeposition of CuInTe2 thin films consisted of aqueous solution mixture of 0.025 M CuCl2, 0.1 M InCl3 and pre-reacted 0.01M tellurium with HNO3.Linear and cyclic sweep voltammograms were analysed to find out the suitable deposition potentials and growth parameters. Acetronitrile was added as a supporting electrolyte and growth was carried out at the constant deposition potentials of -350 mV and - 450 mV with and without stirring. X-ray diffraction (XRD) results obtained in this work show films that were grown under stirring conditions are more oriented in the (112) direction. CuInTe2 were also analyzed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). SEM study revealed the formation of uniformly covered nanoflakes of 40-50 nanometers in width and compositional analysis show that CuInTe2 film grown had an excess of indium content, but (Cu %+In%):Te% is close to stoichiometry.
VL  - 3
IS  - 1
ER  -

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