Thin films of undoped and (Al, N) dual doped CdO were prepared on glass substrate at substrate temperature 350 ºC by spray pyrolysis method. The films are characterized by XRD, AFM, Optical and electrical properties. The films are highly poly crystalline and found to be cubic. AFM images show the surface properties of the film. It increases with increasing concentration of Al & N in the CdO samples. Optical transmittance is made at room temperature within the wavelength range 400 nm to 1100 nm. Direct band gap of undoped CdO has been measured and found to be 2.58 eV and it decreases with (Al, N) dual doping in CdO thin film upto 2.52 eV. The resistivity of undoped CdO shows the metallic behavior upto 370 K and then followed by semiconducting behavior. (Al, N) dual doping shows the carrier compensation during temperature range (355 - 375) K.
| Published in | International Journal of Materials Science and Applications (Volume 2, Issue 4) |
| DOI | 10.11648/j.ijmsa.20130204.11 |
| Page(s) | 124-127 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2013. Published by Science Publishing Group |
Spray Pyrolysis, Dual Doped, CdO, Grain Size
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APA Style
A. F. M. Faizullah, M. K. R. Khan, M. Mozibur Rahman. (2013). Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties. International Journal of Materials Science and Applications, 2(4), 124-127. https://doi.org/10.11648/j.ijmsa.20130204.11
ACS Style
A. F. M. Faizullah; M. K. R. Khan; M. Mozibur Rahman. Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties. Int. J. Mater. Sci. Appl. 2013, 2(4), 124-127. doi: 10.11648/j.ijmsa.20130204.11
AMA Style
A. F. M. Faizullah, M. K. R. Khan, M. Mozibur Rahman. Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties. Int J Mater Sci Appl. 2013;2(4):124-127. doi: 10.11648/j.ijmsa.20130204.11
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Download@article{10.11648/j.ijmsa.20130204.11,
author = {A. F. M. Faizullah and M. K. R. Khan and M. Mozibur Rahman},
title = {Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties},
journal = {International Journal of Materials Science and Applications},
volume = {2},
number = {4},
pages = {124-127},
doi = {10.11648/j.ijmsa.20130204.11},
url = {https://doi.org/10.11648/j.ijmsa.20130204.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130204.11},
abstract = {Thin films of undoped and (Al, N) dual doped CdO were prepared on glass substrate at substrate temperature 350 ºC by spray pyrolysis method. The films are characterized by XRD, AFM, Optical and electrical properties. The films are highly poly crystalline and found to be cubic. AFM images show the surface properties of the film. It increases with increasing concentration of Al & N in the CdO samples. Optical transmittance is made at room temperature within the wavelength range 400 nm to 1100 nm. Direct band gap of undoped CdO has been measured and found to be 2.58 eV and it decreases with (Al, N) dual doping in CdO thin film upto 2.52 eV. The resistivity of undoped CdO shows the metallic behavior upto 370 K and then followed by semiconducting behavior. (Al, N) dual doping shows the carrier compensation during temperature range (355 - 375) K.},
year = {2013}
}
TY - JOUR T1 - Pyrolized Growth of (Al, N) Dual Doped CdO Thin Films and Study of Structural, Surface Morphology and Opto-Electrical Properties AU - A. F. M. Faizullah AU - M. K. R. Khan AU - M. Mozibur Rahman Y1 - 2013/07/20 PY - 2013 N1 - https://doi.org/10.11648/j.ijmsa.20130204.11 DO - 10.11648/j.ijmsa.20130204.11 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 124 EP - 127 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20130204.11 AB - Thin films of undoped and (Al, N) dual doped CdO were prepared on glass substrate at substrate temperature 350 ºC by spray pyrolysis method. The films are characterized by XRD, AFM, Optical and electrical properties. The films are highly poly crystalline and found to be cubic. AFM images show the surface properties of the film. It increases with increasing concentration of Al & N in the CdO samples. Optical transmittance is made at room temperature within the wavelength range 400 nm to 1100 nm. Direct band gap of undoped CdO has been measured and found to be 2.58 eV and it decreases with (Al, N) dual doping in CdO thin film upto 2.52 eV. The resistivity of undoped CdO shows the metallic behavior upto 370 K and then followed by semiconducting behavior. (Al, N) dual doping shows the carrier compensation during temperature range (355 - 375) K. VL - 2 IS - 4 ER -
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