Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur

Shaikrom Askarov; Sharipov Bashirulla; Srazhev Solizhon; Toshboev Tuchi; Salieva Shokhista

doi:doi:10.11648/j.ajpa.20180603.12

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Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur

Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista

Published in American Journal of Physics and Applications (Volume 6, Issue 3)

Received: 7 February 2018 Accepted: 21 March 2018 Published: 14 June 2018

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Abstract

On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d¹0 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.

Published in	American Journal of Physics and Applications (Volume 6, Issue 3)
DOI	10.11648/j.ajpa.20180603.12
Page(s)	76-79
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Silicon, Electrically Neutral Chemically Bound Complexes, Impurity Centers, Sulfur, Nickel, Transition Metals

References

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[4]	M. Yoshida, K. Saito, Appl, Phys., Japan, 6,573 (1967).
[5]	M. K. Bahadyrhanov, S. Zaynobidinov, A. T. Teshaboev, M. A. Hodzhaeva, FTP, 10.1001 (1976).
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[7]	G. Wudbury, J. Ludwig, Sat. articles: Electron spin resonance in semiconductors. IL, M. (1968).
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[10]	V. B. Shuman, A. A. Mahova, Yu. Ayu Astrov, Ayu My Ivanov, A, N. Lodygin, FTP, 46.993, (2012).

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APA Style

Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista. (2018). Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. American Journal of Physics and Applications, 6(3), 76-79. https://doi.org/10.11648/j.ajpa.20180603.12

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ACS Style

Shaikrom Askarov; Sharipov Bashirulla; Srazhev Solizhon; Toshboev Tuchi; Salieva Shokhista. Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. Am. J. Phys. Appl. 2018, 6(3), 76-79. doi: 10.11648/j.ajpa.20180603.12

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AMA Style

Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista. Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. Am J Phys Appl. 2018;6(3):76-79. doi: 10.11648/j.ajpa.20180603.12

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@article{10.11648/j.ajpa.20180603.12,
  author = {Shaikrom Askarov and Sharipov Bashirulla and Srazhev Solizhon and Toshboev Tuchi and Salieva Shokhista},
  title = {Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur},
  journal = {American Journal of Physics and Applications},
  volume = {6},
  number = {3},
  pages = {76-79},
  doi = {10.11648/j.ajpa.20180603.12},
  url = {https://doi.org/10.11648/j.ajpa.20180603.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20180603.12},
  abstract = {On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.},
 year = {2018}
}

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TY  - JOUR
T1  - Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur
AU  - Shaikrom Askarov
AU  - Sharipov Bashirulla
AU  - Srazhev Solizhon
AU  - Toshboev Tuchi
AU  - Salieva Shokhista
Y1  - 2018/06/14
PY  - 2018
N1  - https://doi.org/10.11648/j.ajpa.20180603.12
DO  - 10.11648/j.ajpa.20180603.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 76
EP  - 79
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20180603.12
AB  - On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.
VL  - 6
IS  - 3
ER  -

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Author Information

Shaikrom Askarov

Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Sharipov Bashirulla

Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Srazhev Solizhon

Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Toshboev Tuchi

Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Salieva Shokhista

Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan

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APA Style

Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista. (2018). Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. American Journal of Physics and Applications, 6(3), 76-79. https://doi.org/10.11648/j.ajpa.20180603.12

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ACS Style

Shaikrom Askarov; Sharipov Bashirulla; Srazhev Solizhon; Toshboev Tuchi; Salieva Shokhista. Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. Am. J. Phys. Appl. 2018, 6(3), 76-79. doi: 10.11648/j.ajpa.20180603.12

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AMA Style

Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista. Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. Am J Phys Appl. 2018;6(3):76-79. doi: 10.11648/j.ajpa.20180603.12

Copy | Download

@article{10.11648/j.ajpa.20180603.12,
  author = {Shaikrom Askarov and Sharipov Bashirulla and Srazhev Solizhon and Toshboev Tuchi and Salieva Shokhista},
  title = {Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur},
  journal = {American Journal of Physics and Applications},
  volume = {6},
  number = {3},
  pages = {76-79},
  doi = {10.11648/j.ajpa.20180603.12},
  url = {https://doi.org/10.11648/j.ajpa.20180603.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20180603.12},
  abstract = {On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.},
 year = {2018}
}

Copy | Download

TY  - JOUR
T1  - Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur
AU  - Shaikrom Askarov
AU  - Sharipov Bashirulla
AU  - Srazhev Solizhon
AU  - Toshboev Tuchi
AU  - Salieva Shokhista
Y1  - 2018/06/14
PY  - 2018
N1  - https://doi.org/10.11648/j.ajpa.20180603.12
DO  - 10.11648/j.ajpa.20180603.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 76
EP  - 79
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20180603.12
AB  - On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.
VL  - 6
IS  - 3
ER  -

Copy | Download