Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s

S. Bouzgarrou; M. M. Ben Salem; A. Kalboussi; A. Souifi

doi:doi:10.11648/j.ajpa.20130101.14

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Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s

S. Bouzgarrou, M. M. Ben Salem, A. Kalboussi, A. Souifi

Published in American Journal of Physics and Applications (Volume 1, Issue 1)

Received: 21 May 2013 Published: 30 June 2013

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Abstract

A detailed study of electrically active defects present in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is presented. Current and capacitance Deep Level Transient Spectroscopy (I-DLTS and C-DLTS) techniques are used for the identification of active electrical defects. A notable correlation between deep levels observed by I -DLTS and C-DLTS results and the contribution of parasitic effects (Kink and Hysteresis effects) on output characteristics was evidenced. A new model for Kink effect is presented on InAlAs / InGaAs / InP HEMT’s. This model uses a new polynomial dependence of sheet carrier concentration, on bias and temperature of device structure to calculate Ids – Vds characteristics. The simulation model enables us to confirm that the Kink parasitic effect in Ids – Vds characteristics is strongly correlated by trapping and detrapping mechanisms. Experimental and theoretical results obtained by the new model are in good agreement.

Published in	American Journal of Physics and Applications (Volume 1, Issue 1)
DOI	10.11648/j.ajpa.20130101.14
Page(s)	18-24
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

DLTS, I-DLTS, Ids-Vds, PL, Kink Effect, HEMT

References

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APA Style

S. Bouzgarrou, M. M. Ben Salem, A. Kalboussi, A. Souifi. (2013). Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. American Journal of Physics and Applications, 1(1), 18-24. https://doi.org/10.11648/j.ajpa.20130101.14

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ACS Style

S. Bouzgarrou; M. M. Ben Salem; A. Kalboussi; A. Souifi. Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. Am. J. Phys. Appl. 2013, 1(1), 18-24. doi: 10.11648/j.ajpa.20130101.14

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AMA Style

S. Bouzgarrou, M. M. Ben Salem, A. Kalboussi, A. Souifi. Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. Am J Phys Appl. 2013;1(1):18-24. doi: 10.11648/j.ajpa.20130101.14

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@article{10.11648/j.ajpa.20130101.14,
  author = {S. Bouzgarrou and M. M. Ben Salem and A. Kalboussi and A. Souifi},
  title = {Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s},
  journal = {American Journal of Physics and Applications},
  volume = {1},
  number = {1},
  pages = {18-24},
  doi = {10.11648/j.ajpa.20130101.14},
  url = {https://doi.org/10.11648/j.ajpa.20130101.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20130101.14},
  abstract = {A detailed study of electrically active defects present in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is presented. Current and capacitance Deep Level Transient Spectroscopy (I-DLTS and C-DLTS) techniques are used for the identification of active electrical defects. A notable correlation between deep levels observed by I -DLTS and C-DLTS results and the contribution of parasitic effects (Kink and Hysteresis effects) on output characteristics was evidenced. A new model for Kink effect is presented on InAlAs / InGaAs / InP HEMT’s. This model uses a new polynomial dependence of sheet carrier concentration, on bias and temperature of device structure to calculate Ids – Vds characteristics. The simulation model enables us to confirm that the Kink parasitic effect in Ids – Vds characteristics is strongly correlated by trapping and detrapping mechanisms. Experimental and theoretical results obtained by the new model are in good agreement.},
 year = {2013}
}

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TY - JOUR
T1 - Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s
AU - S. Bouzgarrou
AU - M. M. Ben Salem
AU - A. Kalboussi
AU - A. Souifi
Y1 - 2013/06/30
PY - 2013
N1 - https://doi.org/10.11648/j.ajpa.20130101.14
DO - 10.11648/j.ajpa.20130101.14
T2 - American Journal of Physics and Applications
JF - American Journal of Physics and Applications
JO - American Journal of Physics and Applications
SP - 18
EP - 24
PB - Science Publishing Group
SN - 2330-4308
UR - https://doi.org/10.11648/j.ajpa.20130101.14
AB - A detailed study of electrically active defects present in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is presented. Current and capacitance Deep Level Transient Spectroscopy (I-DLTS and C-DLTS) techniques are used for the identification of active electrical defects. A notable correlation between deep levels observed by I -DLTS and C-DLTS results and the contribution of parasitic effects (Kink and Hysteresis effects) on output characteristics was evidenced. A new model for Kink effect is presented on InAlAs / InGaAs / InP HEMT’s. This model uses a new polynomial dependence of sheet carrier concentration, on bias and temperature of device structure to calculate Ids – Vds characteristics. The simulation model enables us to confirm that the Kink parasitic effect in Ids – Vds characteristics is strongly correlated by trapping and detrapping mechanisms. Experimental and theoretical results obtained by the new model are in good agreement.
VL - 1
IS - 1
ER -

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Author Information

S. Bouzgarrou

Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Avenue de l'Environnement 5000 Monastir, Tunisia
M. M. Ben Salem

Laboratoire de Physique des semiconducteurs et des Composants Electroniques (LA-MA-06), Faculté des Sciences de Monastir, Avenue de Environnement 5000 Monastir, Tunisia
A. Kalboussi

Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Avenue de l'Environnement 5000 Monastir, Tunisia
A. Souifi

Institut de Nanotechnologie de Lyon (INL) ??site INSA??, INSA de Lyon, Bat. Blaise Pascal, 7 Avenue Jean capelle, 69621 Villeurbanne (cedex), France

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APA Style

S. Bouzgarrou, M. M. Ben Salem, A. Kalboussi, A. Souifi. (2013). Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. American Journal of Physics and Applications, 1(1), 18-24. https://doi.org/10.11648/j.ajpa.20130101.14

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ACS Style

S. Bouzgarrou; M. M. Ben Salem; A. Kalboussi; A. Souifi. Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. Am. J. Phys. Appl. 2013, 1(1), 18-24. doi: 10.11648/j.ajpa.20130101.14

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AMA Style

S. Bouzgarrou, M. M. Ben Salem, A. Kalboussi, A. Souifi. Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. Am J Phys Appl. 2013;1(1):18-24. doi: 10.11648/j.ajpa.20130101.14

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@article{10.11648/j.ajpa.20130101.14,
  author = {S. Bouzgarrou and M. M. Ben Salem and A. Kalboussi and A. Souifi},
  title = {Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s},
  journal = {American Journal of Physics and Applications},
  volume = {1},
  number = {1},
  pages = {18-24},
  doi = {10.11648/j.ajpa.20130101.14},
  url = {https://doi.org/10.11648/j.ajpa.20130101.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20130101.14},
  abstract = {A detailed study of electrically active defects present in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is presented. Current and capacitance Deep Level Transient Spectroscopy (I-DLTS and C-DLTS) techniques are used for the identification of active electrical defects. A notable correlation between deep levels observed by I -DLTS and C-DLTS results and the contribution of parasitic effects (Kink and Hysteresis effects) on output characteristics was evidenced. A new model for Kink effect is presented on InAlAs / InGaAs / InP HEMT’s. This model uses a new polynomial dependence of sheet carrier concentration, on bias and temperature of device structure to calculate Ids – Vds characteristics. The simulation model enables us to confirm that the Kink parasitic effect in Ids – Vds characteristics is strongly correlated by trapping and detrapping mechanisms. Experimental and theoretical results obtained by the new model are in good agreement.},
 year = {2013}
}

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