Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves.
| Published in | American Journal of Modern Physics (Volume 11, Issue 3) |
| DOI | 10.11648/j.ajmp.20221103.11 |
| Page(s) | 52-59 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2022. Published by Science Publishing Group |
Electron Beam-induced Current, Schottky Junction, p-n Junction, InSb Device
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APA Style
Xiangle Sun, Haichuan Yin, Xuegong Yu, Qian Sun, Xuqian Bai. (2022). Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. American Journal of Modern Physics, 11(3), 52-59. https://doi.org/10.11648/j.ajmp.20221103.11
ACS Style
Xiangle Sun; Haichuan Yin; Xuegong Yu; Qian Sun; Xuqian Bai. Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. Am. J. Mod. Phys. 2022, 11(3), 52-59. doi: 10.11648/j.ajmp.20221103.11
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Download@article{10.11648/j.ajmp.20221103.11,
author = {Xiangle Sun and Haichuan Yin and Xuegong Yu and Qian Sun and Xuqian Bai},
title = {Applications of Electron Beam-induced Current at p-n Junction in InSb Devices},
journal = {American Journal of Modern Physics},
volume = {11},
number = {3},
pages = {52-59},
doi = {10.11648/j.ajmp.20221103.11},
url = {https://doi.org/10.11648/j.ajmp.20221103.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221103.11},
abstract = {Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves.},
year = {2022}
}
TY - JOUR T1 - Applications of Electron Beam-induced Current at p-n Junction in InSb Devices AU - Xiangle Sun AU - Haichuan Yin AU - Xuegong Yu AU - Qian Sun AU - Xuqian Bai Y1 - 2022/05/07 PY - 2022 N1 - https://doi.org/10.11648/j.ajmp.20221103.11 DO - 10.11648/j.ajmp.20221103.11 T2 - American Journal of Modern Physics JF - American Journal of Modern Physics JO - American Journal of Modern Physics SP - 52 EP - 59 PB - Science Publishing Group SN - 2326-8891 UR - https://doi.org/10.11648/j.ajmp.20221103.11 AB - Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves. VL - 11 IS - 3 ER -
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