Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications

El Hadji Mamadou Keita; Fallou Mbaye; Bachirou Ndiaye; Chamsdine Sow; Cheikh Sene; Babacar Mbow

doi:doi:10.11648/j.ajee.20221003.11

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Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications

El Hadji Mamadou Keita, Fallou Mbaye, Bachirou Ndiaye, Chamsdine Sow, Cheikh Sene, Babacar Mbow

Published in American Journal of Energy Engineering (Volume 10, Issue 3)

Received: 26 May 2022 Accepted: 27 June 2022 Published: 12 July 2022

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Abstract

In this work we study the importance of optimizing the parameters of photoconductive layers to improve the efficiency of a photovoltaic cell. We compare the evolution of the performance of solar cells based on chalcopyrite materials by considering a non-decreasing band gap structure named model (a) based on the structure ZnO(n⁺)/CdS(n)/CuInSe₂(p)/CuInS₂(p⁺) and a decreasing band gap structure named model (b) based on the structure ZnO(n⁺)/CdS(n)/CuInS₂(p)/CuInSe₂(p⁺). The two structures are composed of 4 layers named respectively region 1, region 2, region 3 (base), region 4 (substrate); between regions 2 and 3 is located the space charge region (SCR) where exists a high electric field. The calculation of the external quantum efficiency of the cell and the short-circuit photocurrent density by numerical calculation are established by using the continuity equation of charge carriers and parameters such as the absorption coefficient, diffusion length which models the purity of the material, recombination velocities at the surface and at the interface which models their states, the thicknesses of the different layers, the solar irradiation. The results obtained applied to models (a) and (b), are presented in the form of tables and curves widely analyzed and commented. Considering first the same standard parameters, the model (a) whose absorption threshold is localized in the space charge region and the base, gives the best performance compared to model (b) whose absorption threshold is localized in the substrate. However, the optimization of the parameters, shows an improvement of the performances of the two models but above all a great evolution of the performances of the model (b) which external quantum efficiency becomes appreciably equal to that of the model (a). The short-circuit photocurrent density for solar spectra (AM0, AM1, AM1.5) evolves from (44.92 mA.cm^-2; 33.031 mA.cm^-2; 30.179 mA.cm^-2) → (48.119 mA.cm^-2; 35.155 mA.cm^-2; 32.188 mA.cm^-2) for the model (a), and evolves from (24.525 mA.cm^-2; 19.309 mA.cm^-2; 17.507 mA.cm^-2) → (46.841 mA.cm^-2; 34.303 mA.cm^-2; 31.388 mA.cm^-2) for the model (b).

Published in	American Journal of Energy Engineering (Volume 10, Issue 3)
DOI	10.11648/j.ajee.20221003.11
Page(s)	53-67
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2022. Published by Science Publishing Group

Keywords

Solar Cell, Chalcopyrite Materials, Structure Parameter Optimization, Efficiency

References

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El Hadji Mamadou Keita, Fallou Mbaye, Bachirou Ndiaye, Chamsdine Sow, Cheikh Sene, et al. (2022). Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications. American Journal of Energy Engineering, 10(3), 53-67. https://doi.org/10.11648/j.ajee.20221003.11

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ACS Style

El Hadji Mamadou Keita; Fallou Mbaye; Bachirou Ndiaye; Chamsdine Sow; Cheikh Sene, et al. Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications. Am. J. Energy Eng. 2022, 10(3), 53-67. doi: 10.11648/j.ajee.20221003.11

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AMA Style

El Hadji Mamadou Keita, Fallou Mbaye, Bachirou Ndiaye, Chamsdine Sow, Cheikh Sene, et al. Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications. Am J Energy Eng. 2022;10(3):53-67. doi: 10.11648/j.ajee.20221003.11

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@article{10.11648/j.ajee.20221003.11,
  author = {El Hadji Mamadou Keita and Fallou Mbaye and Bachirou Ndiaye and Chamsdine Sow and Cheikh Sene and Babacar Mbow},
  title = {Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications},
  journal = {American Journal of Energy Engineering},
  volume = {10},
  number = {3},
  pages = {53-67},
  doi = {10.11648/j.ajee.20221003.11},
  url = {https://doi.org/10.11648/j.ajee.20221003.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20221003.11},
  abstract = {In this work we study the importance of optimizing the parameters of photoconductive layers to improve the efficiency of a photovoltaic cell. We compare the evolution of the performance of solar cells based on chalcopyrite materials by considering a non-decreasing band gap structure named model (a) based on the structure ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+) and a decreasing band gap structure named model (b) based on the structure ZnO(n+)/CdS(n)/CuInS2(p)/CuInSe2(p+). The two structures are composed of 4 layers named respectively region 1, region 2, region 3 (base), region 4 (substrate); between regions 2 and 3 is located the space charge region (SCR) where exists a high electric field. The calculation of the external quantum efficiency of the cell and the short-circuit photocurrent density by numerical calculation are established by using the continuity equation of charge carriers and parameters such as the absorption coefficient, diffusion length which models the purity of the material, recombination velocities at the surface and at the interface which models their states, the thicknesses of the different layers, the solar irradiation. The results obtained applied to models (a) and (b), are presented in the form of tables and curves widely analyzed and commented. Considering first the same standard parameters, the model (a) whose absorption threshold is localized in the space charge region and the base, gives the best performance compared to model (b) whose absorption threshold is localized in the substrate. However, the optimization of the parameters, shows an improvement of the performances of the two models but above all a great evolution of the performances of the model (b) which external quantum efficiency becomes appreciably equal to that of the model (a). The short-circuit photocurrent density for solar spectra (AM0, AM1, AM1.5) evolves from (44.92 mA.cm-2; 33.031 mA.cm-2; 30.179 mA.cm-2) → (48.119 mA.cm-2; 35.155 mA.cm-2; 32.188 mA.cm-2) for the model (a), and evolves from (24.525 mA.cm-2; 19.309 mA.cm-2; 17.507 mA.cm-2) → (46.841 mA.cm-2; 34.303 mA.cm-2; 31.388 mA.cm-2) for the model (b).},
 year = {2022}
}

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TY  - JOUR
T1  - Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications
AU  - El Hadji Mamadou Keita
AU  - Fallou Mbaye
AU  - Bachirou Ndiaye
AU  - Chamsdine Sow
AU  - Cheikh Sene
AU  - Babacar Mbow
Y1  - 2022/07/12
PY  - 2022
N1  - https://doi.org/10.11648/j.ajee.20221003.11
DO  - 10.11648/j.ajee.20221003.11
T2  - American Journal of Energy Engineering
JF  - American Journal of Energy Engineering
JO  - American Journal of Energy Engineering
SP  - 53
EP  - 67
PB  - Science Publishing Group
SN  - 2329-163X
UR  - https://doi.org/10.11648/j.ajee.20221003.11
AB  - In this work we study the importance of optimizing the parameters of photoconductive layers to improve the efficiency of a photovoltaic cell. We compare the evolution of the performance of solar cells based on chalcopyrite materials by considering a non-decreasing band gap structure named model (a) based on the structure ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+) and a decreasing band gap structure named model (b) based on the structure ZnO(n+)/CdS(n)/CuInS2(p)/CuInSe2(p+). The two structures are composed of 4 layers named respectively region 1, region 2, region 3 (base), region 4 (substrate); between regions 2 and 3 is located the space charge region (SCR) where exists a high electric field. The calculation of the external quantum efficiency of the cell and the short-circuit photocurrent density by numerical calculation are established by using the continuity equation of charge carriers and parameters such as the absorption coefficient, diffusion length which models the purity of the material, recombination velocities at the surface and at the interface which models their states, the thicknesses of the different layers, the solar irradiation. The results obtained applied to models (a) and (b), are presented in the form of tables and curves widely analyzed and commented. Considering first the same standard parameters, the model (a) whose absorption threshold is localized in the space charge region and the base, gives the best performance compared to model (b) whose absorption threshold is localized in the substrate. However, the optimization of the parameters, shows an improvement of the performances of the two models but above all a great evolution of the performances of the model (b) which external quantum efficiency becomes appreciably equal to that of the model (a). The short-circuit photocurrent density for solar spectra (AM0, AM1, AM1.5) evolves from (44.92 mA.cm-2; 33.031 mA.cm-2; 30.179 mA.cm-2) → (48.119 mA.cm-2; 35.155 mA.cm-2; 32.188 mA.cm-2) for the model (a), and evolves from (24.525 mA.cm-2; 19.309 mA.cm-2; 17.507 mA.cm-2) → (46.841 mA.cm-2; 34.303 mA.cm-2; 31.388 mA.cm-2) for the model (b).
VL  - 10
IS  - 3
ER  -

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Author Information

El Hadji Mamadou Keita

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Fallou Mbaye

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Bachirou Ndiaye

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Chamsdine Sow

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Cheikh Sene

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Babacar Mbow

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

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El Hadji Mamadou Keita, Fallou Mbaye, Bachirou Ndiaye, Chamsdine Sow, Cheikh Sene, et al. (2022). Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications. American Journal of Energy Engineering, 10(3), 53-67. https://doi.org/10.11648/j.ajee.20221003.11

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El Hadji Mamadou Keita; Fallou Mbaye; Bachirou Ndiaye; Chamsdine Sow; Cheikh Sene, et al. Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications. Am. J. Energy Eng. 2022, 10(3), 53-67. doi: 10.11648/j.ajee.20221003.11

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AMA Style

El Hadji Mamadou Keita, Fallou Mbaye, Bachirou Ndiaye, Chamsdine Sow, Cheikh Sene, et al. Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications. Am J Energy Eng. 2022;10(3):53-67. doi: 10.11648/j.ajee.20221003.11

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@article{10.11648/j.ajee.20221003.11,
  author = {El Hadji Mamadou Keita and Fallou Mbaye and Bachirou Ndiaye and Chamsdine Sow and Cheikh Sene and Babacar Mbow},
  title = {Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications},
  journal = {American Journal of Energy Engineering},
  volume = {10},
  number = {3},
  pages = {53-67},
  doi = {10.11648/j.ajee.20221003.11},
  url = {https://doi.org/10.11648/j.ajee.20221003.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20221003.11},
  abstract = {In this work we study the importance of optimizing the parameters of photoconductive layers to improve the efficiency of a photovoltaic cell. We compare the evolution of the performance of solar cells based on chalcopyrite materials by considering a non-decreasing band gap structure named model (a) based on the structure ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+) and a decreasing band gap structure named model (b) based on the structure ZnO(n+)/CdS(n)/CuInS2(p)/CuInSe2(p+). The two structures are composed of 4 layers named respectively region 1, region 2, region 3 (base), region 4 (substrate); between regions 2 and 3 is located the space charge region (SCR) where exists a high electric field. The calculation of the external quantum efficiency of the cell and the short-circuit photocurrent density by numerical calculation are established by using the continuity equation of charge carriers and parameters such as the absorption coefficient, diffusion length which models the purity of the material, recombination velocities at the surface and at the interface which models their states, the thicknesses of the different layers, the solar irradiation. The results obtained applied to models (a) and (b), are presented in the form of tables and curves widely analyzed and commented. Considering first the same standard parameters, the model (a) whose absorption threshold is localized in the space charge region and the base, gives the best performance compared to model (b) whose absorption threshold is localized in the substrate. However, the optimization of the parameters, shows an improvement of the performances of the two models but above all a great evolution of the performances of the model (b) which external quantum efficiency becomes appreciably equal to that of the model (a). The short-circuit photocurrent density for solar spectra (AM0, AM1, AM1.5) evolves from (44.92 mA.cm-2; 33.031 mA.cm-2; 30.179 mA.cm-2) → (48.119 mA.cm-2; 35.155 mA.cm-2; 32.188 mA.cm-2) for the model (a), and evolves from (24.525 mA.cm-2; 19.309 mA.cm-2; 17.507 mA.cm-2) → (46.841 mA.cm-2; 34.303 mA.cm-2; 31.388 mA.cm-2) for the model (b).},
 year = {2022}
}

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TY  - JOUR
T1  - Optimizing Structures Based on Chalcopyrite Materials for Photovoltaic Applications
AU  - El Hadji Mamadou Keita
AU  - Fallou Mbaye
AU  - Bachirou Ndiaye
AU  - Chamsdine Sow
AU  - Cheikh Sene
AU  - Babacar Mbow
Y1  - 2022/07/12
PY  - 2022
N1  - https://doi.org/10.11648/j.ajee.20221003.11
DO  - 10.11648/j.ajee.20221003.11
T2  - American Journal of Energy Engineering
JF  - American Journal of Energy Engineering
JO  - American Journal of Energy Engineering
SP  - 53
EP  - 67
PB  - Science Publishing Group
SN  - 2329-163X
UR  - https://doi.org/10.11648/j.ajee.20221003.11
AB  - In this work we study the importance of optimizing the parameters of photoconductive layers to improve the efficiency of a photovoltaic cell. We compare the evolution of the performance of solar cells based on chalcopyrite materials by considering a non-decreasing band gap structure named model (a) based on the structure ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+) and a decreasing band gap structure named model (b) based on the structure ZnO(n+)/CdS(n)/CuInS2(p)/CuInSe2(p+). The two structures are composed of 4 layers named respectively region 1, region 2, region 3 (base), region 4 (substrate); between regions 2 and 3 is located the space charge region (SCR) where exists a high electric field. The calculation of the external quantum efficiency of the cell and the short-circuit photocurrent density by numerical calculation are established by using the continuity equation of charge carriers and parameters such as the absorption coefficient, diffusion length which models the purity of the material, recombination velocities at the surface and at the interface which models their states, the thicknesses of the different layers, the solar irradiation. The results obtained applied to models (a) and (b), are presented in the form of tables and curves widely analyzed and commented. Considering first the same standard parameters, the model (a) whose absorption threshold is localized in the space charge region and the base, gives the best performance compared to model (b) whose absorption threshold is localized in the substrate. However, the optimization of the parameters, shows an improvement of the performances of the two models but above all a great evolution of the performances of the model (b) which external quantum efficiency becomes appreciably equal to that of the model (a). The short-circuit photocurrent density for solar spectra (AM0, AM1, AM1.5) evolves from (44.92 mA.cm-2; 33.031 mA.cm-2; 30.179 mA.cm-2) → (48.119 mA.cm-2; 35.155 mA.cm-2; 32.188 mA.cm-2) for the model (a), and evolves from (24.525 mA.cm-2; 19.309 mA.cm-2; 17.507 mA.cm-2) → (46.841 mA.cm-2; 34.303 mA.cm-2; 31.388 mA.cm-2) for the model (b).
VL  - 10
IS  - 3
ER  -

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